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SX014CR is listed in the Scrs range at ChipApex. The manufacturer field lists SMC Diode Solutions. Its product description is SCR 900V 1.25A TO92CR. Review the specifications below when checking this part for your BOM.
The SX014CR is a sensitive gate Silicon Controlled Rectifier (SCR) manufactured by SMC Diode Solutions. It features a maximum off-state current of 5 µA and supports an RMS on-state current rated at 1.25 A. The device has a maximum on-state voltage of 1.5 V and operates within a junction temperature range of -40°C to 110°C. It is housed in a TO-92 package, specifically TO-226AA or TO-226AB, suitable for through-hole mounting.
Verify the specific package variant (TO-226AA vs TO-226AB) against schematic requirements. Confirm thermal management needs for the 1.25 A RMS rating. Ensure gate sensitivity parameters match the driving circuit capabilities. Check datasheet revisions for any updates to electrical characteristics or mechanical dimensions prior to finalizing procurement.
Select this component when high dv/dt immunity is required in sensitive gate SCR applications. The 1.25 A RMS current rating suits moderate power switching tasks. Consider the TO-92 package for through-hole assembly constraints. Evaluate the 5 µA max off-state current for leakage-sensitive designs. Verify operating temperature range compatibility with the intended environment.
The SX014CR belongs to the SX series of SCRs from SMC Diode Solutions. This series emphasizes robustness against electromagnetic interference and high dv/dt rates. It complements other discrete thyristors in protection and switching roles. The TO-92 form factor provides a compact solution for through-hole PCB layouts requiring reliable latching behavior.
Public confirmed substitute part numbers are not available in the provided documentation. Cross-reference with other SMC Diode Solutions SCRs having similar 1.25 A ratings and TO-92 packages only if official substitution data is verified.
The maximum off-state current is 5 µA.
Yes, the SX014CR series provides a high dv/dt rate with strong resistance to electromagnetic interface.
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