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T107B1 is listed in the Scrs range at ChipApex. The manufacturer field lists Littelfuse Inc.. Its product description is SCR 200V 4A TO202. Review the specifications below when checking this part for your BOM.
The Littelfuse T107B1 is a half-wave unidirectional, gate-controlled silicon controlled rectifier (SCR) with a 4 A RMS on-state current rating. It features a repetitive peak off-state voltage of 200 V and a maximum DC gate trigger current of 500 µA. The device utilizes a TO-202 package with an anode-connected case. Key electrical parameters include a peak on-state voltage of 2.5 V, a holding current of 8 mA, and a non-repetitive peak surge current capability of 50 A for one cycle at 60 Hz.
Verify the specific ordering suffix to confirm the exact lead frame configuration and packaging type required for your assembly process. Confirm RoHS compliance status and check for any custom design variations by consulting the manufacturer directly if standard configurations do not meet mechanical constraints.
Select this component when a 4 A continuous current rating and 200 V blocking voltage are required in a TO-202 package. Ensure the application's thermal management aligns with the specified thermal resistance values. Verify that the gate drive circuit can supply sufficient current to exceed the 500 µA trigger threshold under all operating temperatures.
This device belongs to the Teccor line of sensitive SCRs manufactured by Littelfuse. The product family covers ratings from 0.8 A to 10 A with voltages up to 600 V. These components complement the manufacturer's power SCR lineup and are characterized by glass-passivated junctions for enhanced durability in industrial and consumer electronics.
T106B1
The T107B1 can withstand a peak one-cycle forward surge current of 50 A at 60 Hz.
The DC gate trigger current increases as the case temperature decreases. Specific ratios relative to 25 °C are provided in the normalized curves within the datasheet.
The gate-controlled turn-on time depends on the gate trigger current. For a 10 mA gate pulse, the typical turn-on time is approximately 50 µs.
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