TK25V60X5,LQ

$5.85

Description：PB-F POWER MOSFET TRANSISTOR DTM
Series：DTMOSIV
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:6f8b0d81370e Category: Single FETs, MOSFETs Brand: Toshiba Semiconductor and Storage

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Product introduction

TK25V60X5,LQ is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is PB-F POWER MOSFET TRANSISTOR DTM. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for TK25V60X5,LQ

Description：PB-F POWER MOSFET TRANSISTOR DTM
Series：DTMOSIV
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：25A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：150mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id：4.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs：60 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：2400 pF @ 300 V
FET Feature：-
Power Dissipation (Max)：180W (Tc)
Operating Temperature：150°C
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：4-DFN-EP (8x8)
Package / Case：4-VSFN Exposed Pad

Single FETs, MOSFETs datasheet and documents for TK25V60X5,LQ

TK25V60X5,LQ

Single FETs, MOSFETs Overview

The TK25V60X5,LQ is an N-channel Power MOSFET from Toshiba's DTMOS IV-H series, designed for high-efficiency switching applications. It features a 600 V drain-source voltage rating and supports a continuous drain current of 25 A at ambient temperature. The device utilizes a surface-mount 4-DFN (8x8 mm) package with an exposed pad, offering a thermal dissipation capacity of 180 W at case temperature. Key electrical characteristics include a maximum gate threshold voltage of 4.5 V at 1.2 mA and a typical on-resistance of 0.15 Ω at 10 V gate drive. It operates up to a junction temperature of 150 °C and complies with RoHS3 standards.

Single FETs, MOSFETs Feature Summary

DTMOS IV-H Super Junction technology for optimized switching performance
Surface-mount 4-DFN package with exposed thermal pad
High breakdown voltage capability for robust operation
Lead-free finish compliant with environmental regulations

Single FETs, MOSFETs Applications

Switching Voltage Regulators
Server Solutions
General-purpose power switching circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'LQ' against the manufacturer's official datasheet to confirm the exact pinout and tape-and-reel specifications. Ensure that the selected component matches the required thermal management design for the 4-DFN package. Cross-reference the part number with authorized distributors to avoid counterfeit components. Confirm RoHS3 compliance status if required by your assembly process.

Single FETs, MOSFETs Selection Notes

Select this component when a compact surface-mount solution is required for 600 V applications. The 4-DFN package offers superior thermal performance compared to traditional through-hole options. Consider the 0.15 Ω on-resistance for efficiency calculations in low-voltage drop scenarios. Ensure the driving circuit can provide sufficient gate charge to handle the switching frequency requirements.

Single FETs, MOSFETs Part Context

This part belongs to Toshiba's DTMOS IV-H family, which employs super junction technology to reduce on-resistance and switching losses. The series is engineered for high-frequency power conversion systems where size and efficiency are critical constraints.