TK6P53D(T6RSS-Q)

Single FETs, MOSFETs Overview

The TK6P53D(T6RSS-Q) is a single N-channel power MOSFET manufactured by Toshiba Semiconductor and Storage. It utilizes silicon technology and features the MOSVII architecture for optimized performance. The device is housed in a TO-220FP-3 through-hole package, suitable for high-power applications requiring robust thermal management. Key electrical characteristics include a drain-source breakdown voltage of 525 V and a continuous drain current rating of 6 A. The component exhibits a maximum on-resistance of 1.3 Ohms and supports a power dissipation capacity of 35 W.

Single FETs, MOSFETs Feature Summary

• Integrates MOSVII technology to achieve low conduction losses and efficient switching performance.
• Features a rugged TO-220FP-3 package designed for effective heat dissipation in high-power environments.
• Provides high-voltage capability with a 525 V drain-source breakdown voltage rating.

Single FETs, MOSFETs Applications

• High-voltage power supply circuits
• Industrial motor drive systems
• Inverter topologies

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix T6RSS-Q against official Toshiba documentation to confirm exact marking and packaging variations. Ensure compatibility with existing thermal interface materials due to the TO-220FP-3 form factor. Confirm RoHS compliance status via the manufacturer's latest datasheet before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring high voltage isolation and moderate current handling capabilities. The 1.3 Ohm on-resistance makes it suitable for applications where efficiency at lower currents is prioritized over ultra-low resistance requirements. Evaluate thermal constraints carefully given the 35 W power dissipation limit in the specified package.

Single FETs, MOSFETs Part Context

This part belongs to the TK6A53D series family from Toshiba Semiconductor and Storage. The series focuses on medium-to-high voltage power switching solutions utilizing advanced MOSFET structures. The specific model variant indicates distinct packaging or marking configurations within the broader product line.

Single FETs, MOSFETs Replacement Considerations

Consult official Toshiba substitution guides for verified equivalents. Generic replacements may not match the specific MOSVII characteristics or thermal performance of the original component.