TK7R4A15Q5,S4X

$3.12

Description：150V UMOS10-HSD TO-220SIS 7.4MOH
Series：U-MOSX-H
Mfr：Toshiba Semiconductor and Storage
Package：Tube

SKU:0b96bb9fb004 Category: Single FETs, MOSFETs Brand: Toshiba Semiconductor and Storage

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

TK7R4A15Q5,S4X is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is 150V UMOS10-HSD TO-220SIS 7.4MOH. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for TK7R4A15Q5,S4X

Description：150V UMOS10-HSD TO-220SIS 7.4MOH
Series：U-MOSX-H
Mfr：Toshiba Semiconductor and Storage
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：150 V
Current - Continuous Drain (Id) @ 25°C：57A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：8V, 10V
Rds On (Max) @ Id, Vgs：7.4mOhm @ 28.5A, 10V
Vgs(th) (Max) @ Id：4.5V @ 1.4mA
Gate Charge (Qg) (Max) @ Vgs：66 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4970 pF @ 75 V
FET Feature：-
Power Dissipation (Max)：46W (Tc)
Operating Temperature：175°C
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220SIS
Package / Case：TO-220-3 Full Pack

Single FETs, MOSFETs datasheet and documents for TK7R4A15Q5,S4X

TK7R4A15Q5,S4X

Single FETs, MOSFETs Overview

The TK7R4A15Q5,S4X is a silicon N-channel MOSFET utilizing Toshiba U-MOS-H technology, housed in a TO-220SIS package. It features a drain-source voltage of 150 V and a continuous drain current of 57 A at 25 °C case temperature. The device exhibits a typical on-resistance of 6.2 mΩ at VGS = 10 V. Key dynamic parameters include a gate charge of 66 nC, reverse recovery time of 44 ns, and reverse recovery charge of 40 nC. Thermal resistance from channel to case is 3.26 °C/W, with a maximum junction temperature rating of 175 °C.

Single FETs, MOSFETs Feature Summary

Fast reverse recovery characteristics with low trr and Qrr values for efficient switching.
Low gate charge (QSW) and on-resistance (RDS(ON)) to minimize switching and conduction losses.
High avalanche energy capability supporting robust operation under transient conditions.
Enhancement mode operation with defined threshold voltage range for reliable drive compatibility.

Single FETs, MOSFETs Applications

High-Efficiency DC-DC Converters
Switching Voltage Regulators
Motor Drivers

Single FETs, MOSFETs Procurement Notes

Verify RoHS compliance status via the manufacturer's sales representative, as indicated by lot number markings. Confirm environmental specifications against the latest Toshiba Semiconductor Reliability Handbook before integration. Ensure design accounts for absolute maximum ratings, particularly regarding thermal management and pulsed current limits during operation.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high efficiency and fast switching speeds within a 150 V system. The low RDS(ON) and gate charge support reduced power dissipation. Evaluate thermal performance using the specified channel-to-case resistance. Consider the single-pulse avalanche energy rating if the application involves inductive load switching or potential overvoltage events.

Single FETs, MOSFETs Part Context

This part belongs to the Toshiba U-MOS-H series of silicon N-channel MOSFETs. It is designed for power switching applications where low loss and high reliability are critical. The TO-220SIS package provides a balance of electrical isolation and thermal dissipation suitable for through-hole mounting in industrial and consumer power electronics.