TTC011B,Q

Single Bipolar Transistors Overview

The TTC011B is a silicon NPN epitaxial type bipolar transistor manufactured by Toshiba Semiconductor and Storage. It is designed for power and audio-frequency amplifier applications. The device features a minimum collector-emitter breakdown voltage of 230 V and a typical transition frequency of 100 MHz. Static characteristics include a DC current gain ranging from 100 to 320, with a maximum collector-base leakage current of 200 nA at 230 V. Dynamic performance specifies a typical collector output capacitance of 20 pF. The component is housed in a TO-126N package.

Single Bipolar Transistors Feature Summary

• High collector voltage capability
• Small collector output capacitance
• High transition frequency
• Complementary to TTA006B

Single Bipolar Transistors Applications

• Power Amplifiers
• Audio-Frequency Amplifiers

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official Toshiba documentation to confirm environmental compliance status, such as RoHS compatibility. Confirm that the received component matches the exact part number TTC011B. Review the manufacturer's reliability handbook regarding derating concepts and handling precautions before integration into designs requiring high reliability.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high voltage handling capabilities combined with moderate switching speeds. The device serves as the complementary pair to the TTA006B PNP transistor, facilitating push-pull configurations. Ensure the design accounts for the specified junction temperature limits and power dissipation constraints within the TO-126N package.

Single Bipolar Transistors Part Context

This component belongs to the category of bipolar transistors utilizing silicon NPN epitaxial technology. It is intended for use in electronic circuits where robust voltage ratings and defined current gains are required. The TO-126N encapsulation provides a standard form factor for through-hole mounting in various amplifier topologies.

Single Bipolar Transistors Replacement Considerations

The datasheet identifies the TTA006B as the complementary device. No other direct substitute part numbers are documented in the provided source material.

Single Bipolar Transistors FAQ

What is the minimum collector-emitter breakdown voltage?

The minimum collector-emitter breakdown voltage (V(BR)CEO) is 230 V.

Is the TTC011B isolated from surrounding parts?

No. Although encapsulated in epoxy resin, the device does not provide a guarantee for maximum isolation voltage and should be treated as non-isolated.

What is the typical transition frequency?

The typical transition frequency (fT) is 100 MHz.