UF4SC120030K4S

Single FETs, MOSFETs Overview

The onsemi UF4SC120030K4S is a 1200V Gen 4 Silicon Carbide Field-Effect Transistor designed for high-efficiency power conversion. It features a unique common-source cascode configuration integrating a SiC JFET with an optimized Si-MOSFET, enabling standard gate drive compatibility. Key electrical parameters include a maximum drain-source voltage of 1200V and a typical on-resistance (Rds(on)) of 30mΩ at 25°C. The device supports continuous drain currents up to approximately 56A depending on thermal conditions and offers low gate charge characteristics to minimize switching losses in hard-switching applications.

Single FETs, MOSFETs Feature Summary

• Common-source cascode architecture combining SiC JFET and Si-MOSFET for enhanced performance
• Standard gate drive voltage compatibility eliminating need for negative bias supplies
• Low on-resistance and gate charge for improved efficiency in high-frequency switching
• Robust packaging options supporting through-hole and surface-mount installation

Single FETs, MOSFETs Applications

• Electric vehicle onboard chargers (OBC)
• Industrial battery charging systems
• Uninterruptible power supply (UPS) units
• Renewable energy inverters and storage systems

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'K4S' against official onsemi documentation to confirm exact pinout, package variant, and tape-and-reel specifications. Ensure that the requested component matches the Gen 4 family characteristics described in the datasheet. Cross-reference the part number with authorized distributors to confirm availability and authenticity. Check for any specific handling or ESD precautions required during assembly.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high voltage blocking capability with low conduction losses. The cascode structure allows direct replacement of silicon IGBTs or superjunction MOSFETs without modifying existing gate driver circuits. Consider thermal management requirements given the power dissipation ratings. Evaluate system efficiency gains from reduced switching losses compared to traditional silicon devices in similar voltage classes.

Single FETs, MOSFETs Part Context

This device belongs to onsemi's UF4C/SC 1200V Gen 4 SiC FET series, representing an advancement in wide-bandgap semiconductor technology. The series targets mainstream 800V bus architectures in modern power electronics. The integration of SiC and Si technologies aims to bridge the performance gap between pure SiC devices and legacy silicon solutions, offering a balanced approach to cost and performance in industrial and automotive applications.

Single FETs, MOSFETs Replacement Considerations

Official substitutes within the same Gen 4 family may include variants with different Rds(on) values such as 39mΩ or 53mΩ, provided they share the same package and pinout. Verify that alternative parts maintain the common-source cascode configuration to ensure gate drive compatibility. Do not assume cross-compatibility with non-cascode SiC FETs without reviewing specific electrical characteristics and thermal limits.