VB30M120C-E3/4W

Diode Arrays Overview

The VB30M120C-E3/4W is a dual high voltage Trench MOS Barrier Schottky (TMBS) rectifier manufactured by Vishay General Semiconductor. It features a common cathode configuration in a D2PAK (TO-263AB) surface-mount package. The device supports a maximum repetitive peak reverse voltage of 120 V and a total maximum average forward rectified current of 30 A, with 15 A per diode. Key electrical parameters include a typical instantaneous forward voltage of 0.52 V at 5 A and 125 °C, and a peak forward surge current rating of 150 A. The component operates within a junction temperature range of -40 to +150 °C.

Diode Arrays Feature Summary

• Utilizes Trench MOS Schottky technology to achieve low forward voltage drop and reduced power losses for high efficiency operation.
• Designed as a dual common cathode rectifier suitable for solar cell junction box bypass applications without reverse bias DC forward current.
• Complies with MSL level 1 standards per J-STD-020 and meets the JESD 201 class 2 whisker test.

Diode Arrays Applications

• Solar cell junction box bypass diodes
• High frequency DC/DC converters
• Switching power supplies

Diode Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's documentation to confirm packaging details. The E3 suffix indicates RoHS compliance for commercial grade material categorization. Confirm that the tube quantity matches the required delivery mode for the intended production volume.

Diode Arrays Selection Notes

Select this component when a dual common cathode Schottky rectifier is required for 120 V applications. Ensure the thermal design accommodates the specified junction temperature limits and derating curves. Verify that the D2PAK footprint aligns with the PCB layout requirements for heatsinking.

Diode Arrays Part Context

This part belongs to the VB30 series of high voltage TMBS rectifiers from Vishay. It shares the same base die and electrical characteristics as other variants in the family, differentiated primarily by packaging options and environmental compliance suffixes such as E3 or M3.

Diode Arrays Replacement Considerations

Direct substitutes include the VB30M120C-M3/I and VB30M120C-E3/8W. These parts share identical electrical ratings and pin configurations but differ in packaging format and reel quantities.

Diode Arrays FAQ

What is the maximum repetitive peak reverse voltage?

The maximum repetitive peak reverse voltage (VRRM) is 120 V.

Does the device meet moisture sensitivity level 1?

Yes, the device meets MSL level 1 per J-STD-020 with an LF maximum peak of 245 °C.

What is the typical forward voltage at 5 A and 125 °C?

The typical instantaneous forward voltage (VF) is 0.52 V at an IF of 5 A and a temperature of 125 °C.