VS-10CTQ150-1-M3

Diode Arrays Overview

The Vishay VS-10CTQ150-1-M3 is a high-performance Schottky rectifier featuring a center tap configuration with two independent anodes and a common cathode. It provides a maximum average forward current of 10 A (5 A per leg) and a repetitive peak reverse voltage of 150 V. The device utilizes proprietary barrier technology to ensure low forward voltage drop, reaching 0.73 V at 5 A and 125 °C junction temperature. It supports operation up to a maximum junction temperature of 175 °C and offers high frequency performance suitable for demanding power conversion applications.

Diode Arrays Feature Summary

• Center tap dual diode configuration with common cathode
• Proprietary barrier technology for low forward voltage drop
• High temperature capability up to 175 °C junction temperature
• Guard ring structure for enhanced ruggedness and reliability

Diode Arrays Applications

• Switching power supplies
• DC/DC converters
• Freewheeling diodes
• Reverse battery protection circuits

Diode Arrays Procurement Notes

Verify the specific package variant required, as this part number corresponds to the TO-262AA outline. Confirm compliance with RoHS standards and halogen-free requirements via the M3 suffix. Ensure thermal management design accounts for the specified thermal resistance values. Validate that the 150 V rating meets the circuit's peak reverse voltage demands under all operating conditions.

Diode Arrays Selection Notes

Select this component when a center tap topology is necessary for synchronous rectification or full-wave configurations. Compare the 0.73 V forward voltage at elevated temperatures against standard rectifiers to assess efficiency gains. Consider the 175 °C operating limit for high-temperature environments where silicon rectifiers may fail. Evaluate the surge current capability of 620 A for inductive load switching scenarios.

Diode Arrays Part Context

This device belongs to Vishay's Q Series Schottky rectifiers, designed for high-efficiency power applications. It shares electrical characteristics with the VS-10CTQ150S-M3 but differs in physical packaging. The series emphasizes low leakage current and fast switching speeds, making it suitable for modern compact power designs requiring robust thermal performance.

Diode Arrays Replacement Considerations

The VS-10CTQ150S-M3 serves as a direct functional substitute with identical electrical ratings, differing only in the D2PAK (TO-263AB) package instead of TO-262AA. Verify pinout compatibility and mounting dimensions before substitution.

Diode Arrays FAQ

What is the maximum non-repetitive surge current rating?

The maximum peak one-cycle non-repetitive surge current is 620 A for a 5 µs sine pulse.

How does the forward voltage change with temperature?

The forward voltage decreases as temperature increases; it is 0.93 V at 25 °C and drops to 0.73 V at 125 °C for a 5 A current.

Is this device suitable for unclamped inductive switching?

Yes, the datasheet specifies a non-repetitive avalanche energy rating of 5 mJ per leg.