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VS-32CTQ030-N3 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR SCHOTT 30V 30A TO2203. Review the specifications below when checking this part for your BOM.
The Vishay VS-32CTQ030-N3 is a Schottky rectifier featuring a dual anode common cathode configuration housed in a TO-220AB package. It provides a maximum average forward current of 30 A and a maximum repetitive peak reverse voltage of 30 V. The device supports junction temperatures up to 150 °C with a typical forward voltage drop of 0.40 V at 15 Apk and 125 °C. Maximum non-repetitive surge current reaches 900 A for a 5 μs sine pulse, while the maximum reverse leakage current is 97 mA at 125 °C.
Verify the specific ordering suffix against official documentation to confirm compliance status. The -N3 designation indicates halogen-free, RoHS compliant, and totally lead-free construction. Confirm that the required quantity aligns with the standard packaging minimum order quantity of 1000 units per antistatic plastic tube before finalizing procurement.
Select this component when applications require reliable operation at junction temperatures up to 150 °C. The low forward voltage drop minimizes conduction losses in high-frequency switching environments. Ensure thermal management design accommodates the specified thermal resistance from junction to case for optimal performance under continuous load conditions.
This part belongs to the VS-32CTQ... Schottky rectifier series designed for optimized low reverse leakage at high temperatures. The series utilizes proprietary barrier technology to support reliable operation up to 150 °C junction temperature. It is manufactured by Vishay Semiconductors and intended for general-purpose high-power rectification tasks.
The datasheet lists VS-32CTQ030PbF as a related variant within the same product family. Verify if the PbF version meets specific halogen-free requirements, as the -N3 suffix explicitly denotes halogen-free construction. Cross-reference electrical ratings and package dimensions to ensure compatibility.
The maximum junction temperature (TJ) range extends up to 150 °C.
The device features a dual anode common cathode configuration with two independent Schottky elements.
The device can withstand a maximum peak one-cycle non-repetitive surge current of 900 A for a 5 μs sine pulse.
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