Diode Arrays VS-MBRB2080CT-M3 product image

VS-MBRB2080CT-M3

$0.54
  • Description:DIODE ARR SCHOTT 80V 10A TO263AB
  • Series:-

SKU:413b4d9befd7 Category: Brand:

  
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VS-MBRB2080CT-M3 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR SCHOTT 80V 10A TO263AB. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for VS-MBRB2080CT-M3

  • Description:DIODE ARR SCHOTT 80V 10A TO263AB
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):80 V
  • Current - Average Rectified (Io) (per Diode):10A
  • Voltage - Forward (Vf) (Max) @ If:800 mV @ 10 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:100 µA @ 80 V
  • Operating Temperature - Junction:-65°C ~ 150°C
  • Mounting Type:Surface Mount
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package:TO-263AB (D2PAK)
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for VS-MBRB2080CT-M3

VS-MBRB2080CT-M3

Diode Arrays Overview

The VS-MBRB2080CT-M3 is a high-performance Schottky rectifier featuring two independent diodes in a common cathode configuration. It provides a maximum average forward current of 10 A per leg (20 A total) and supports a maximum DC reverse voltage of 80 V. The device operates with a junction temperature range from -65 °C to +150 °C and utilizes proprietary barrier technology for low reverse leakage at elevated temperatures. Packaged in the D2PAK (TO-263AB) surface-mount format, it offers optimized thermal performance for demanding power conversion applications.

Diode Arrays Feature Summary

  • Proprietary barrier technology enables reliable operation up to 150 °C junction temperature while maintaining low reverse leakage.
  • Guard ring design enhances ruggedness and ensures long-term reliability under stress conditions.
  • High purity epoxy encapsulation provides enhanced mechanical strength and superior moisture resistance.

Diode Arrays Applications

  • Switching power supplies
  • DC-DC converters
  • Freewheeling diodes
  • Reverse battery protection

Diode Arrays Procurement Notes

Verify the specific package variant against the ordering suffix; 'B' indicates the D2PAK (TO-263AB) package, while absence of this suffix denotes the TO-262AA through-hole version. Confirm compliance requirements such as halogen-free status and RoHS directives by referencing the manufacturer's material categorization documentation prior to final procurement.

Diode Arrays Selection Notes

Select this component when designing circuits requiring robust high-frequency operation and low forward voltage drop characteristics. Ensure the application environment allows for adequate heatsinking to maintain case temperatures within limits defined by the thermal resistance specifications. Validate that the peak repetitive forward current ratings align with the square wave operating conditions of the target system.

Diode Arrays Part Context

This part belongs to the Vishay VS-MBRB20...CT-M3 series of center-tap Schottky rectifiers. It shares core electrical characteristics with variants offering higher reverse voltages, such as the 90 V and 100 V rated models. The series is designed to meet JEDEC qualification standards and is available in both surface-mount and through-hole configurations to accommodate diverse PCB layout requirements.

Diode Arrays Replacement Considerations

Direct pin-compatible substitutes include other Vishay parts within the same family, specifically the VS-MBRB2090CT-M3 and VS-MBRB20100CT-M3, which offer identical current ratings but higher reverse voltage capabilities.

Diode Arrays FAQ

What is the maximum non-repetitive surge current rating?

The device can withstand a non-repetitive peak surge current of 850 A for a 5 μs sine pulse or 150 A for a half-wave, single-phase, 60 Hz pulse.

How does the forward voltage drop vary with temperature?

The forward voltage drop decreases as temperature increases; it is specified at 0.80 V at 25 °C and drops to 0.70 V at 125 °C for a 10 A instantaneous forward current.

Is the device suitable for high-frequency switching applications?

Yes, the datasheet explicitly lists high-frequency operation as a key feature, supported by low junction capacitance and fast switching characteristics inherent to Schottky technology.

VS-MBRB2080CT-M3VS-MBRB2080CT-M3
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