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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYSIGBT 3000V 26A ISOPLUS I4-PACTubeISOPLUS i4-PAC™Through HoleBIMOSFET™-55°C ~ 150°C (TJ)
IXYSIGBT 3000V 37A ISOPLUS I4-PACTubeISOPLUS i4-PAC™Through HoleBIMOSFET™-55°C ~ 150°C (TJ)
IXYSIGBT 3000V 34A ISOPLUS I4-PACTubeISOPLUS i4-PAC™Through HoleBIMOSFET™-55°C ~ 150°C (TJ)
IXYSIGBT 3600V 45A ISOPLUS I4-PACTubeISOPLUS i4-PAC™Through HoleBIMOSFET™-55°C ~ 150°C (TJ)
IXYSIGBT 3000V 40A ISOPLUS I4-PACTubeISOPLUS i4-PAC™Through HoleBIMOSFET™-55°C ~ 150°C (TJ)
IXYSIGBT 1600V 28A ISOPLUS I4-PACTubeISOPLUS i4-PAC™Through HoleBIMOSFET™-55°C ~ 150°C (TJ)
IXYSIGBT 3000V 60A ISOPLUS I4-PACTubeISOPLUS i4-PAC™Through HoleBIMOSFET™-55°C ~ 150°C (TJ)
IXYSIGBT 3600V 70A ISOPLUS I4-PACTubeISOPLUS i4-PAC™Through HoleBIMOSFET™-55°C ~ 150°C (TJ)
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