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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYSIGBT 1700V 80A TO-247ADTubeTO-247ADThrough HoleBIMOSFET™-55°C ~ 150°C (TJ)
IXYSIGBT 1700V 42A TO-247ADTubeTO-247ADThrough HoleBIMOSFET™-55°C ~ 150°C (TJ)
IXYSIGBT 2500V 104A TO-247ADTubeTO-247ADThrough HoleBIMOSFET™-55°C ~ 150°C (TJ)
IXYSIGBT 3000V 104A TO-247HVTubeTO-247HVThrough HoleBIMOSFET™-55°C ~ 150°C (TJ)
IXYSIGBT 1600V 5.7A TO-247ADTubeTO-247ADThrough HoleBIMOSFET™-55°C ~ 150°C (TJ)
IXBH6N170
IXBH6N170
$10.69
IXYSIGBT 1700V 12A TO-247ADTubeTO-247ADThrough HoleBIMOSFET™-55°C ~ 150°C (TJ)
IXYSIGBT 1600V 9A TO-247ADTubeTO-247ADThrough HoleBIMOSFET™-55°C ~ 150°C (TJ)
IXYSIGBT 3000V 130A TO-264AATubeTO-264AAThrough HoleBIMOSFET™-55°C ~ 150°C (TJ)
Add ComparisonUp to 4 can be added