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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYSIGBT 3000V 30A TO-268AATubeTO-268AASurface MountBIMOSFET™-55°C ~ 150°C (TJ)
IXYSIGBT 3000V 30A TO-268HVTubeTO-268HV (IXBT)Surface MountBIMOSFET™-55°C ~ 150°C (TJ)
IXYSIGBT 3000V 38A TO-268HVTubeTO-268HV (IXBT)Surface MountBIMOSFET™-55°C ~ 150°C (TJ)
IXYSIGBT 1700V 16A TO-268AATubeTO-268AASurface MountBIMOSFET™-55°C ~ 150°C (TJ)
IXYSIGBT 1700V 16A TO-268HVTubeTO-268HV (IXBT)Surface MountBIMOSFET™-55°C ~ 150°C (TJ)
IXYSIGBT 3000V 50A TO-268AATubeTO-268AASurface MountBIMOSFET™-55°C ~ 150°C (TJ)
IXYSIGBT 3000V 50A TO-268AATubeTO-268AASurface MountBIMOSFET™-55°C ~ 150°C (TJ)
IXYSIGBT 3600V 70A TO-268AATubeTO-268AASurface MountBIMOSFET™-55°C ~ 150°C (TJ)
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