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Single IGBTs
Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
Screen Default Ranking Price By Date
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
 IXBK64N250 $123.28 | IXYS | IGBT 2500V 75A TO-264AA | Tube | TO-264AA | Through Hole | - | - |
IXBK75N170 $41.92 | IXYS | IGBT 1700V 200A TO-264AA | Tube | TO-264AA | Through Hole | BIMOSFET™ | -55°C ~ 150°C (TJ) |
| IXYS | IGBT 1700V 110A TO-264AA | Tube | TO-264AA | Through Hole | BIMOSFET™ | -55°C ~ 150°C (TJ) | |
| IXYS | IGBT 3600V 92A ISOPLUSI5-PAK | Tube | ISOPLUSi5-Pak™ | Through Hole | BIMOSFET™ | -55°C ~ 150°C (TJ) | |
 IXBL64N250 $90.79 | IXYS | IGBT 2500V 116A ISOPLUSI5-PAK | Tube | ISOPLUSi5-Pak™ | Through Hole | BIMOSFET™ | -55°C ~ 150°C (TJ) |
| IXYS | IGBT 1600V 5.7A TO-220-3 | Tube | TO-220-3 | Through Hole | BIMOSFET™ | -55°C ~ 150°C (TJ) | |
| IXYS | IGBT 1700V 57A ISOPLUS247 | Tube | ISOPLUS247™ | Through Hole | BIMOSFET™ | -55°C ~ 150°C (TJ) | |
 IXBT10N170 $7.06 | IXYS | IGBT 1700V 20A TO-268AA | Tube | TO-268AA | Surface Mount | BIMOSFET™ | -55°C ~ 150°C (TJ) |
