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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYSIGBT 3000V 86A ISOPLUS I4-PACTubeISOPLUS i4-PAC™Through HoleBIMOSFET™-55°C ~ 150°C (TJ)
IXYSIGBT 1600V 7A ISOPLUS I4-PACTubeISOPLUS i4-PAC™Through HoleBIMOSFET™-55°C ~ 150°C (TJ)
IXYSIGBT 1700V 20A TO-247ADTubeTO-247ADThrough HoleBIMOSFET™-55°C ~ 150°C (TJ)
IXYSIGBT 3000V 34A TO-247HVTubeTO-247HV (IXBH)Through HoleBIMOSFET™-55°C ~ 150°C (TJ)
IXYSIGBT 3000V 30A TO-247ADTubeTO-247ADThrough HoleBIMOSFET™-55°C ~ 150°C (TJ)
IXYSIGBT 3000V 38A TO-247HVTubeTO-247HV (IXBH)Through HoleBIMOSFET™-55°C ~ 150°C (TJ)
IXYSIGBT 1700V 40A TO-247ADTubeTO-247ADThrough HoleBIMOSFET™-55°C ~ 150°C (TJ)
IXYSIGBT 1700V 16A TO-247ADTubeTO-247ADThrough HoleBIMOSFET™-55°C ~ 150°C (TJ)
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