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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYSIGBT PT 1200V 84A ISOPLUS247TubeISOPLUS247™Through Hole--40°C ~ 150°C (TJ)
IXYSIGBT PT 1200V 100A SOT-227BTubeSOT-227BChassis MountXPT™-
IXYSIGBT NPT/PT 600V 300A SOT-227BTubeSOT-227BChassis Mount--
IXYSIGBT NPT/PT 600V 120A SOT-227BTubeSOT-227BChassis Mount--
IXYSIGBT NPT 3000V 38A TO-263TubeTO-263Surface MountBIMOSFET™-55°C ~ 150°C (TJ)
IXYSIGBT 1700V 16A TO-263HVTubeTO-263HVSurface MountBIMOSFET™-55°C ~ 150°C (TJ)
IXYSIGBT 1700V 16A TO-263HVTape & Reel (TR)TO-263HVSurface MountBIMOSFET™-55°C ~ 150°C (TJ)
IXYSIGBT 3000V 29A ISOPLUS I4-PACTubeISOPLUS i4-PAC™Through HoleBIMOSFET™-55°C ~ 150°C (TJ)
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