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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYSIGBT PT 1200V 38A TO-263HVTape & Reel (TR)TO-263HVSurface MountXPT™-
IXYSIGBT PT 1200V 38A TO-263HVTubeTO-263HVSurface MountXPT™-
IXYSIGBT PT 1200V 38A TO-247ADTubeTO-247ADThrough Hole--40°C ~ 150°C (TJ)
IXYSIGBT PT 1200V 32A ISOPLUS-SMPDTape & Reel (TR)ISOPLUS-SMPD™.BSurface Mount--55°C ~ 150°C (TJ)
IXYSIGBT PT 1200V 32A ISOPLUS-SMPDTubeISOPLUS-SMPD™.BSurface Mount--55°C ~ 150°C (TJ)
IXYSIGBT 1200V 43A ISOPLUS-SMPDTape & Reel (TR)ISOPLUS-SMPD™.BSurface Mount--55°C ~ 150°C (TJ)
IXYSIGBT 1200V 43A ISOPLUS-SMPDTubeISOPLUS-SMPD™.BSurface Mount--55°C ~ 150°C (TJ)
IXYSIGBT PT 1200V 58A TO-247ADTubeTO-247ADThrough Hole--40°C ~ 150°C (TJ)
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