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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYSIGBT PT 1200V 58A ISOPLUS247TubeISOPLUS247™Through Hole--40°C ~ 150°C (TJ)
IXYSIGBT PT 1200V 78A TO-247ADTubeTO-247ADThrough Hole--40°C ~ 150°C (TJ)
IXYSIGBT PT 1200V 9A TO-252AATape & Reel (TR)TO-252AASurface Mount--40°C ~ 150°C (TJ)
IXYSIGBT PT 1200V 9A TO-252AATubeTO-252AASurface MountXPT™-
IXYSIGBT 1200V 9A TO-268AATape & Reel (TR)TO-268AASurface Mount--40°C ~ 150°C (TJ)
IXYSIGBT PT 1200V 9A TO-268AATubeTO-268AASurface Mount--40°C ~ 150°C (TJ)
IXYSIGBT PT 1200V 9A TO-252AATape & Reel (TR)TO-252AASurface Mount--40°C ~ 150°C (TJ)
IXYSIGBT PT 1200V 9A TO-252AATubeTO-252AASurface MountXPT™-
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