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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYSIGBT 3000V 104A TO-268HVTubeTO-268HV (IXBT)Surface MountBIMOSFET™-55°C ~ 150°C (TJ)
IXYSIGBT 1700V 12A TO-268AATubeTO-268AASurface MountBIMOSFET™-55°C ~ 150°C (TJ)
IXYSIGBT 2500V 55A PLUS247TubePLUS247™-3Through HoleBIMOSFET™-55°C ~ 150°C (TJ)
IXYSIGBT 3600V 125A TO-247PLUS-HVTubeTO-247PLUS-HVThrough HoleBIMOSFET™-55°C ~ 150°C (TJ)
IXYSIGBT 3000V 130A PLUS247TubePLUS247™-3Through HoleBIMOSFET™-55°C ~ 150°C (TJ)
IXBX64N250
IXBX64N250
$109.40
IXYSIGBT 2500V 156A PLUS247TubePLUS247™-3Through HoleBIMOSFET™-55°C ~ 150°C (TJ)
IXYSIGBT 1700V 200A PLUS247TubePLUS247™-3Through HoleBIMOSFET™-55°C ~ 150°C (TJ)
IXYSIGBT 1700V 110A PLUS247TubePLUS247™-3Through HoleBIMOSFET™-55°C ~ 150°C (TJ)
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