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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() IXBT42N300HV $46.89 | IXYS | IGBT 3000V 104A TO-268HV | Tube | TO-268HV (IXBT) | Surface Mount | BIMOSFET™ | -55°C ~ 150°C (TJ) |
![]() IXBT6N170 $8.57 | IXYS | IGBT 1700V 12A TO-268AA | Tube | TO-268AA | Surface Mount | BIMOSFET™ | -55°C ~ 150°C (TJ) |
![]() IXBX25N250 $36.68 | IXYS | IGBT 2500V 55A PLUS247 | Tube | PLUS247™-3 | Through Hole | BIMOSFET™ | -55°C ~ 150°C (TJ) |
![]() IXBX50N360HV $58.82 | IXYS | IGBT 3600V 125A TO-247PLUS-HV | Tube | TO-247PLUS-HV | Through Hole | BIMOSFET™ | -55°C ~ 150°C (TJ) |
![]() IXBX55N300 $70.58 | IXYS | IGBT 3000V 130A PLUS247 | Tube | PLUS247™-3 | Through Hole | BIMOSFET™ | -55°C ~ 150°C (TJ) |
![]() IXBX64N250 $109.40 | IXYS | IGBT 2500V 156A PLUS247 | Tube | PLUS247™-3 | Through Hole | BIMOSFET™ | -55°C ~ 150°C (TJ) |
![]() IXBX75N170 $41.67 | IXYS | IGBT 1700V 200A PLUS247 | Tube | PLUS247™-3 | Through Hole | BIMOSFET™ | -55°C ~ 150°C (TJ) |
![]() IXBX75N170A $31.48 | IXYS | IGBT 1700V 110A PLUS247 | Tube | PLUS247™-3 | Through Hole | BIMOSFET™ | -55°C ~ 150°C (TJ) |

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