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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() IXBT24N170 $12.31 | IXYS | IGBT 1700V 60A TO-268AA | Tube | TO-268AA | Surface Mount | BIMOSFET™ | -55°C ~ 150°C (TJ) |
![]() IXBT2N250 $19.79 | IXYS | IGBT 2500V 5A TO-268AA | Tube | TO-268AA | Surface Mount | BIMOSFET™ | -55°C ~ 150°C (TJ) |
![]() IXBT2N250-TR $11.65 | IXYS | IGBT 2500V 5A TO-268 | Tape & Reel (TR) | TO-268 | Surface Mount | BIMOSFET™ | -55°C ~ 150°C (TJ) |
![]() IXBT32N300 $25.08 | IXYS | IGBT 3000V 80A TO-268AA | Tube | TO-268AA | Surface Mount | BIMOSFET™ | -55°C ~ 150°C (TJ) |
![]() IXBT32N300HV $39.49 | IXYS | IGBT 3000V 80A TO-268HV | Tube | TO-268HV (IXBT) | Surface Mount | BIMOSFET™ | -55°C ~ 150°C (TJ) |
![]() IXBT42N170 $23.46 | IXYS | IGBT 1700V 80A TO-268AA | Tube | TO-268AA | Surface Mount | BIMOSFET™ | -55°C ~ 150°C (TJ) |
![]() IXBT42N170-TRL $12.22 | IXYS | IGBT 1700V 80A TO-268 | Tape & Reel (TR) | TO-268 | Surface Mount | BIMOSFET™ | - |
![]() IXBT42N170A $15.22 | IXYS | IGBT 1700V 42A TO-268AA | Tube | TO-268AA | Surface Mount | BIMOSFET™ | -55°C ~ 150°C (TJ) |

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