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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYSIGBT 1700V 60A TO-268AATubeTO-268AASurface MountBIMOSFET™-55°C ~ 150°C (TJ)
IXBT2N250
IXBT2N250
$19.79
IXYSIGBT 2500V 5A TO-268AATubeTO-268AASurface MountBIMOSFET™-55°C ~ 150°C (TJ)
IXYSIGBT 2500V 5A TO-268Tape & Reel (TR)TO-268Surface MountBIMOSFET™-55°C ~ 150°C (TJ)
IXYSIGBT 3000V 80A TO-268AATubeTO-268AASurface MountBIMOSFET™-55°C ~ 150°C (TJ)
IXYSIGBT 3000V 80A TO-268HVTubeTO-268HV (IXBT)Surface MountBIMOSFET™-55°C ~ 150°C (TJ)
IXYSIGBT 1700V 80A TO-268AATubeTO-268AASurface MountBIMOSFET™-55°C ~ 150°C (TJ)
IXYSIGBT 1700V 80A TO-268Tape & Reel (TR)TO-268Surface MountBIMOSFET™-
IXYSIGBT 1700V 42A TO-268AATubeTO-268AASurface MountBIMOSFET™-55°C ~ 150°C (TJ)
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