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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| IXYS | IGBT PT 600V 160A PLUS247 | Tube | PLUS247™-3 | Through Hole | - | -55°C ~ 150°C (TJ) | |
![]() IXXA30N65C3HV $1.72 | IXYS | IGBT 650V 52A TO-263HV | Tube | TO-263HV | Surface Mount | XPT™, GenX3™ | -55°C ~ 175°C (TJ) |
![]() IXXA50N60B3 $4.71 | IXYS | IGBT 600V 120A TO-263AA | Tube | TO-263AA | Surface Mount | XPT™, GenX3™ | -55°C ~ 175°C (TJ) |
![]() IXXH100N60B3 $11.43 | IXYS | IGBT PT 600V 220A TO-247AD | Tube | TO-247AD (IXXH) | Through Hole | GenX3™, XPT™ | -55°C ~ 175°C (TJ) |
![]() IXXH100N60C3 $11.19 | IXYS | IGBT PT 600V 190A TO-247AD | Tube | TO-247AD (IXXH) | Through Hole | GenX3™, XPT™ | -55°C ~ 175°C (TJ) |
![]() IXXH110N65B4 $5.82 | IXYS | IGBT PT 650V 250A TO-247 | Tube | TO-247 (IXTH) | Through Hole | XPT™, GenX4™ | -55°C ~ 175°C (TJ) |
![]() IXXH110N65C4 $11.45 | IXYS | IGBT PT 650V 234A TO-247AD | Tube | TO-247AD (IXXH) | Through Hole | GenX4™, XPT™ | -55°C ~ 175°C (TJ) |
![]() IXXH140N65B4 $7.93 | IXYS | IGBT PT 650V 340A TO-247 | Tube | TO-247 (IXTH) | Through Hole | XPT™, GenX4™ | -55°C ~ 175°C (TJ) |

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