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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Infineon TechnologiesIGBT NPT 1200V 6.2A TO262-3TubePG-TO262-3-1Through Hole--55°C ~ 150°C (TJ)
onsemiIGBT 600V 160A TO-264-3TubeTO-264-3Through Hole--55°C ~ 150°C (TJ)
onsemiIGBT 600V 160A TO-264-3TubeTO-264-3Through Hole--55°C ~ 150°C (TJ)
Fairchild SemiconductorIGBT 1500V 40A HPM F2TubeHPM F2Through Hole--55°C ~ 150°C (TJ)
Fairchild SemiconductorIGBT 1500V 40A HPM F2TubeHPM F2Through Hole--55°C ~ 150°C (TJ)
onsemiIGBT 600V 80A TO-264-3TubeTO-264-3Through Hole--55°C ~ 150°C (TJ)
onsemiIGBT 600V 80A TO-264-3TubeTO-264-3Through Hole--55°C ~ 150°C (TJ)
onsemiIGBT 1500V 10A TO-264-3TubeTO-264-3Through Hole--55°C ~ 150°C (TJ)
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