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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
onsemiIGBT 1500V 10A TO-3PFTubeTO-3PFThrough Hole--55°C ~ 150°C (TJ)
Fairchild SemiconductorIGBT 600V 80A TO-3PFBulkTO-3PFThrough Hole--55°C ~ 150°C (TJ)
onsemiIGBT, 80A, 600V, N-CHANNELBulk--*-
Fairchild SemiconductorIGBT 600V 16A TO-3PNBulkTO-3PNThrough Hole--55°C ~ 150°C (TJ)
Fairchild SemiconductorIGBT 1200V 24A TO-3PBulkTO-3PThrough Hole--55°C ~ 150°C (TJ)
Fairchild SemiconductorIGBT 1200V 24A TO-3PBulkTO-3PThrough Hole--55°C ~ 150°C (TJ)
onsemiIGBT 600V 24A TO-3PNTubeTO-3PNThrough Hole--55°C ~ 150°C (TJ)
onsemiIGBT 600V 32A 195W TO3PTubeTO-3PThrough Hole--55°C ~ 150°C (TJ)
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