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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
onsemiIGBT 400V D2PAKBulk--*-
Infineon TechnologiesIGBT NPT 600V 31A TO263-3-2BulkPG-TO263-3-2Surface Mount--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBTBulk--*-
Infineon TechnologiesIGBT NPT 600V 40A TO263-3-2Tape & Reel (TR)PG-TO263-3-2Surface Mount--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT NPT 600V 41A TO263-3-2Tape & Reel (TR)PG-TO263-3-2Surface Mount--55°C ~ 150°C (TJ)
onsemiIGBT 390V 20A D2PAKTubeD2PAKSurface Mount--
onsemiIGBT 390V 20A D2PAKBulkD2PAKSurface Mount--
onsemiIGBT D2PAK 350V 20ABulk--*-
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