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Single IGBTs
Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
Screen Default Ranking Price By Date
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| onsemi | IGBT 600V 23A TO-3PN | Tube | TO-3PN | Through Hole | - | -55°C ~ 150°C (TJ) | |
| onsemi | IGBT 600V 48A 235W TO3P | Tube | TO-3P | Through Hole | - | -55°C ~ 150°C (TJ) | |
 SGH30N60RUFTU $3.37 | onsemi | IGBT 600V 48A TO-3PN | Tube | TO-3PN | Through Hole | - | -55°C ~ 150°C (TJ) |
 SGH40N60UFDM1TU $1.84 | onsemi | IGBT 600V 40A 160W TO3P | Tube | TO-3P | Through Hole | - | -55°C ~ 150°C (TJ) |
 SGH40N60UFDTU $1.98 | onsemi | IGBT 600V 40A 160W TO3P | Bulk,Tube | TO-3P | Through Hole | - | -55°C ~ 150°C (TJ) |
 SGH40N60UFTU $3.22 | Fairchild Semiconductor | IGBT 600V 40A TO-3P | Bulk | TO-3P | Through Hole | - | -55°C ~ 150°C (TJ) |
| onsemi | IGBT 600V 80A 195W TO3P | Tube | TO-3P | Through Hole | - | -55°C ~ 150°C (TJ) | |
| onsemi | IGBT 600V 80A 195W TO3P | Tube | TO-3P | Through Hole | - | -55°C ~ 150°C (TJ) |
