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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() SGL60N90DG3TU $4.34 | onsemi | IGBT TRENCH 900V 60A TO-264-3 | Tube | TO-264-3 | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() SGL60N90DG3YDTU $2.69 | onsemi | IGBT TRENCH 900V 60A TO-264-3 | Tube | TO-264-3 | Through Hole | - | -55°C ~ 150°C (TJ) |
| onsemi | IGBT 600V 2.4A SOT-223-4 | Tape & Reel (TR) | SOT-223-4 | Surface Mount | - | -55°C ~ 150°C (TJ) | |
| Infineon Technologies | IGBT NPT 1200V 6.2A TO220-3 | Tube | PG-TO220-3-1 | Through Hole | - | -55°C ~ 150°C (TJ) | |
![]() SGP02N60XKSA1 $0.67 | Infineon Technologies | IGBT NPT 600V 6A TO220-3 | Tube | PG-TO220-3-1 | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() SGP04N60XKSA1 $0.94 | Infineon Technologies | IGBT NPT 600V 9.4A TO220-3 | Tube,Tube | PG-TO220-3-1 | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() SGP06N60XKSA1 $0.90 | Infineon Technologies | IGBT NPT 600V 12A TO220-3 | Tube | PG-TO220-3-1 | Through Hole | - | -55°C ~ 150°C (TJ) |
| Infineon Technologies | IGBT NPT 1200V 16.5A TO220-3 | Tube | PG-TO220-3-1 | Through Hole | - | -55°C ~ 150°C (TJ) |

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