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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
STMicroelectronicsIGBT TRENCH FS 1200V 50A TO-247TubeTO-247-3Through Hole--55°C ~ 175°C (TJ)
STMicroelectronicsIGBT TRENCH FS 1350V 50A TO247TubeTO-247 Long LeadsThrough HoleIH2-55°C ~ 175°C (TJ)
STMicroelectronicsIGBT TRENCH FS 1200V 50A TO247TubeTO-247 Long LeadsThrough Hole--55°C ~ 175°C (TJ)
STMicroelectronicsIGBT TRENCH FS 1200V 50A TO-247TubeTO-247-3Through Hole--55°C ~ 175°C (TJ)
STMicroelectronicsIGBT TRENCH FS 600V 60A TO247TubeTO-247 Long LeadsThrough HoleHB-55°C ~ 175°C (TJ)
STMicroelectronicsIGBT TRENCH FS 650V 60A TO247TubeTO-247 Long LeadsThrough HoleHB-55°C ~ 175°C (TJ)
STMicroelectronicsIGBT TRENCH FS 650V 50A TO247BulkTO-247 Long LeadsThrough Hole--55°C ~ 175°C (TJ)
STMicroelectronicsIGBT TRENCH FS 650V 60A TO247TubeTO-247 Long LeadsThrough HoleHB-55°C ~ 175°C (TJ)
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