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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() NXH003P120M3F2PTNG $189.73 | onsemi | MOSFET 2N-CH 1200V 435A 36PIM | Tray | 36-PIM (56.7x62.8) | Chassis Mount | - | -40°C ~ 150°C (TJ) |
![]() NXH004P120M3F2PNG $163.51 | onsemi | MOSFET 2N-CH 1200V 338A 36PIM | Tray | 36-PIM (56.7x62.8) | Chassis Mount | - | -40°C ~ 175°C (TJ) |
![]() NXH004P120M3F2PTHG $151.44 | onsemi | MOSFET 2N-CH 1200V 284A 36PIM | Tray,Tray | 36-PIM (56.7x62.8) | Chassis Mount | - | -40°C ~ 175°C (TJ) |
![]() NXH004P120M3F2PTNG $166.29 | onsemi | MOSFET 2N-CH 1200V 338A 36PIM | Tray | 36-PIM (56.7x62.8) | Chassis Mount | - | -40°C ~ 175°C (TJ) |
![]() NXH006P120M3F2PTHG $120.50 | onsemi | MOSFET 2N-CH 1200V 191A 36PIM | Tray | 36-PIM (56.7x62.8) | Chassis Mount | - | -40°C ~ 175°C (TJ) |
![]() NXH007F120M3F2PTHG $132.80 | onsemi | MOSFET 4N-CH 1200V 149A 34PIM | Tray | 34-PIM (56.7x42.5) | Chassis Mount | - | -40°C ~ 175°C (TJ) |
![]() NXH008P120M3F1PG $81.51 | onsemi | MOSFET 2N-CH 1200V 145A | Tray | - | Chassis Mount | - | -40°C ~ 175°C (TJ) |
![]() NXH008P120M3F1PTG $69.45 | onsemi | MOSFET 2N-CH 1200V 145A | Tray | - | Chassis Mount | - | -40°C ~ 175°C (TJ) |