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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() NXH008T120M3F2PTHG $124.81 | onsemi | MOSFET 4N-CH 1200V 129A 29PIM | Tray | 29-PIM (56.7x42.5) | Chassis Mount | - | -40°C ~ 175°C (TJ) |
![]() NXH010P120M3F1PG $58.56 | onsemi | MOSFET 2N-CH 1200V 105A | Tray | - | Chassis Mount | - | -40°C ~ 175°C (TJ) |
![]() NXH010P120M3F1PTG $58.56 | onsemi | MOSFET 2N-CH 1200V 105A | Tray | - | Chassis Mount | - | -40°C ~ 175°C (TJ) |
![]() NXH010P120MNF1PG $87.58 | onsemi | MOSFET 2N-CH 1200V 114A | Tray | - | Chassis Mount | - | -40°C ~ 150°C (TJ) |
![]() NXH010P120MNF1PNG $98.84 | onsemi | MOSFET 2N-CH 1200V 114A | Tray | - | Chassis Mount | - | -40°C ~ 175°C (TJ) |
![]() NXH010P120MNF1PTG $141.21 | onsemi | MOSFET 2N-CH 1200V 114A | Tray | - | Chassis Mount | - | -40°C ~ 150°C (TJ) |
![]() NXH010P120MNF1PTNG $87.58 | onsemi | MOSFET 2N-CH 1200V 114A | Tray | - | Chassis Mount | - | -40°C ~ 175°C (TJ) |
![]() NXH010P90MNF1PG $74.96 | onsemi | MOSFET 2N-CH 900V 154A | Tray | - | Chassis Mount | - | -40°C ~ 150°C (TJ) |

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