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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
International RectifierIGBT 1200V 40A TO-247ADBulkTO-247ADThrough Hole--40°C ~ 150°C (TJ)
International RectifierIGBT 1200V 40A TO-247ACBulkTO-247ACThrough Hole--40°C ~ 150°C (TJ)
International RectifierIGBT 1200V 60A TO-247ADBulkTO-247ADThrough Hole--40°C ~ 150°C (TJ)
International RectifierIGBT 1200V 60A TO-247ACBulkTO-247ACThrough Hole--40°C ~ 150°C (TJ)
International RectifierIRG8P45N65 - 650V 45A, IGBTBulk----
International RectifierIRG8P45N65 - 65V, 45A IGBTBulk----
International RectifierIGBT 1200V 80A TO-247ADBulkTO-247ADThrough Hole--40°C ~ 150°C (TJ)
International RectifierIGBT 1200V 80A TO-247ACBulkTO-247ACThrough Hole--40°C ~ 150°C (TJ)
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