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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Infineon TechnologiesIGBT TRENCH 600V 48A TO-220ABTubeTO-220ABThrough Hole--55°C ~ 175°C (TJ)
Infineon TechnologiesIGBT TRENCH 600V 20A TO-220ABTubeTO-220ABThrough Hole--55°C ~ 175°C (TJ)
International RectifierIGBT 600V 11A TO-220ABTubeTO-220ABThrough Hole--40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT 600V 16A TO-220ABTube,TubeTO-220ABThrough Hole--40°C ~ 175°C (TJ)
International RectifierIGBT 600V 23A TO-220ABTubeTO-220ABThrough Hole--40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT 600V 32A TO-220ACBulk,TubeTO-220ACThrough Hole--40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT 600V 47A TO-220ACTubeTO-220ACThrough Hole--40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT 600V 65A TO-220ACTubeTO-220ACThrough Hole--55°C ~ 175°C (TJ)
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