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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Infineon TechnologiesIGBT NPT 600V 28A D2PAKTape & Reel (TR),Cut Tape (CT),BulkD2PAKSurface Mount--55°C ~ 175°C (TJ)
International RectifierIGBT NPT 600V 22A TO-262BulkTO-262Through Hole--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT 430V 20A TO-262TubeTO-262Through Hole--40°C ~ 175°C (TJ)
International RectifierIGBT NPT 600V 31A TO262-3BulkPG-TO262-3Through Hole--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT NPT 600V 31A TO-262BulkTO-262Through Hole--55°C ~ 150°C (TJ)
International RectifierIGBT NPT 600V 78A TO-262BulkTO-262Through Hole--55°C ~ 175°C (TJ)
International RectifierIGBT TRENCH 600V 48A TO-262BulkTO-262Through Hole--55°C ~ 175°C (TJ)
International RectifierIGBT 600V 65A TO-262BulkTO-262Through Hole--55°C ~ 175°C (TJ)
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