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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
International RectifierIGBT NPT 600V 11A D2PAKBulkD2PAKSurface Mount--55°C ~ 175°C (TJ)
Infineon TechnologiesIGBT NPT 600V 12A D2PAKTubeD2PAKSurface Mount--55°C ~ 175°C (TJ)
Infineon TechnologiesIGBT NPT 600V 13A D2PAKTubeD2PAKSurface Mount--55°C ~ 150°C (TJ)
International RectifierIGBT NPT 600V 13A D2PAKBulkD2PAKSurface Mount--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT NPT 600V 13A D2PAKTape & Reel (TR)D2PAKSurface Mount--55°C ~ 150°C (TJ)
International RectifierIGBT 600V 13A TO263-3-901BulkPG-TO263-3-901Surface Mount--55°C ~ 150°C (TJ)
International RectifierIRGS6B60 - IGBT WITH ULTRAFAST SBulk--*-
International RectifierIGBT NPT 600V 28A D2PAKBulkD2PAKSurface Mount--55°C ~ 175°C (TJ)
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