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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
International RectifierIGBT NPT 600V 11A TO-262BulkTO-262Through Hole--55°C ~ 175°C (TJ)
International RectifierIGBT NPT 600V 13A TO-262BulkTO-262Through Hole--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT MOD 600V 90A 298W INT-A-PAK-INT-A-PAKChassis Mount--
Infineon TechnologiesTRENCH 40<-<100VTape & Reel (TR)----
Infineon TechnologiesTRENCH 40<-<100VTape & Reel (TR)----
Infineon TechnologiesTRENCH 40<-<100VTape & Reel (TR)----
Infineon TechnologiesTRENCH 40<-<100VTape & Reel (TR),Cut Tape (CT)----
Infineon TechnologiesTRENCH 40<-<100VTape & Reel (TR),Cut Tape (CT)----
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