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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYSIGBT NPT 1200V 95A ISOPLUS247TubeISOPLUS247™Through Hole--55°C ~ 150°C (TJ)
IXYSIGBT PT 1200V 140A PLUS247TubePLUS247™-3Through HoleX2PT™-
IXYSIGBT PT 4500V 74A ISOPLUS264TubeISOPLUS264™Through HoleX2PT™-
IXYSIGBT PT 3300V 85A ISOPLUS264TubeISOPLUS264™Through HoleX2PT™-
IXYSIGBT PT 1200V 130A SOT-227BTubeSOT-227BChassis MountX2PT™, XPT™-
IXYSIGBT 1000V 24A TO-263AATubeTO-263AASurface Mount--55°C ~ 150°C (TJ)
IXYSIGBT PT 1200V 22A TO-263AATubeTO-263AASurface MountGenX3™-55°C ~ 150°C (TJ)
IXYSIGBT PT 1200V 22A TO-263Tape & Reel (TR)TO-263 (D2PAK)Surface MountGenX3™-
Add ComparisonUp to 4 can be added