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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYSIGBT PT 1200V TO-268AATubeTO-268AASurface MountGenX3™-55°C ~ 150°C (TJ)
IXYSIGBT PT 600V 70A TO-268AATubeTO-268AASurface MountHiPerFAST™-55°C ~ 150°C (TJ)
IXYSIGBT PT 600V 70A TO-268AATubeTO-268AASurface MountHiPerFAST™-55°C ~ 150°C (TJ)
IXYSIGBT PT 600V 70A TO-268AATubeTO-268AASurface MountHiPerFAST™-55°C ~ 150°C (TJ)
IXYSIGBT PT 1200V 75A TO-268AATubeTO-268AASurface MountGenX3™-55°C ~ 150°C (TJ)
IXYSIGBT PT 1200V 75A TO-268HVTape & Reel (TR)TO-268HV (IXGT)Surface Mount--55°C ~ 150°C (TJ)
IXYSIGBT NPT 1700V 75A TO-268AATubeTO-268AASurface Mount--55°C ~ 150°C (TJ)
IXYSIGBT NPT 1700V 75A TO-268AATape & Reel (TR),Cut Tape (CT)TO-268AASurface Mount--55°C ~ 150°C (TJ)
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