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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() STGWT20H60DF $1.15 | STMicroelectronics | IGBT TRENCH FS 600V 40A TO-3P | Tube | TO-3P | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() STGWT20H65FB $2.93 | STMicroelectronics | IGBT TRENCH FS 650V 40A TO-3P | Tube | TO-3P | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() STGWT20HP65FB $0.94 | STMicroelectronics | IGBT TRENCH FS 650V 40A TO-3P | Tube | TO-3P | Through Hole | HB | -55°C ~ 175°C (TJ) |
![]() STGWT20IH125DF $3.22 | STMicroelectronics | IGBT TRENCH FS 1250V 40A TO-3P | Tube | TO-3P | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() STGWT20V60DF $3.48 | STMicroelectronics | IGBT TRENCH FS 600V 40A TO-3P | Tube | TO-3P | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() STGWT20V60F $3.48 | STMicroelectronics | IGBT TRENCH FS 600V 40A TO-3P | Tube | TO-3P | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() STGWT28IH125DF $1.46 | STMicroelectronics | IGBT TRENCH FS 1250V 60A TO-3P | Tube | TO-3P | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() STGWT30H60DFB $3.66 | STMicroelectronics | IGBT TRENCH FS 600V 60A TO-3P | Tube | TO-3P | Through Hole | - | -55°C ~ 175°C (TJ) |

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