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IGBTs
IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
Screen Default Ranking Price By Date
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
 STGWT80H65DFB $6.38 | STMicroelectronics | IGBT TRENCH FS 650V 120A TO-3P | Tube | TO-3P | Through Hole | - | -55°C ~ 175°C (TJ) |
STGWT80H65FB $5.87 | STMicroelectronics | IGBT TRENCH FS 650V 120A TO-3P | Tube | TO-3P | Through Hole | - | -55°C ~ 175°C (TJ) |
STGWT80V60DF $5.56 | STMicroelectronics | IGBT TRENCH FS 600V 120A TO-3P | Tube | TO-3P | Through Hole | - | -55°C ~ 175°C (TJ) |
STGWT80V60F $5.47 | STMicroelectronics | IGBT TRENCH FS 600V 120A TO-3P | Tube | TO-3P | Through Hole | - | -55°C ~ 175°C (TJ) |
 STGY40NC60VD $6.19 | STMicroelectronics | IGBT 600V 80A MAX247 | Tube | MAX247™ | Through Hole | PowerMESH™ | -55°C ~ 150°C (TJ) |
STGY50NC60WD $10.42 | STMicroelectronics | IGBT 600V 110A MAX247 | Tube | MAX247™ | Through Hole | PowerMESH™ | -55°C ~ 150°C (TJ) |
STGY80H65DFB $13.14 | STMicroelectronics | IGBT TRENCH FS 650V 120A MAX247 | Tube | MAX247™ | Through Hole | - | -55°C ~ 175°C (TJ) |
STGYA120M65DF2 $7.40 | STMicroelectronics | IGBT NPT FS 650V 160A MAX247 | Tube | MAX247™ | Through Hole | M | -55°C ~ 175°C (TJ) |
