Single Bipolar Transistors 2DC4617S-7 product image

2DC4617S-7

$0.08
  • Description:TRANS NPN 50V 0.15A SOT-523
  • Series:-

SKU:e7fc6b97985c Category: Brand:

  
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2DC4617S-7 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is TRANS NPN 50V 0.15A SOT-523. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2DC4617S-7

  • Description:TRANS NPN 50V 0.15A SOT-523
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):150 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:400mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:270 @ 1mA, 6V
  • Power - Max:150 mW
  • Frequency - Transition:180MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-523
  • Supplier Device Package:SOT-523
  • Grade:Automotive
  • Qualification:AEC-Q101

Single Bipolar Transistors datasheet and documents for 2DC4617S-7

2DC4617S-7

Single Bipolar Transistors Overview

The Diodes Incorporated 2DC4617S-7-F is an NPN small-signal bipolar junction transistor (BJT) housed in a surface-mount SOT-523 package. It features a collector-emitter breakdown voltage of 50V and supports a continuous collector current of 150mA. The device offers a minimum DC current gain (hFE) of 270 at 1mA and 6V, with a maximum collector-emitter saturation voltage of 0.4V at 50mA. Electrical characteristics include a collector-base breakdown voltage of 60V and an emitter-base breakdown voltage of 7V. Power dissipation is rated at 150mW at 25°C ambient temperature, with an operating temperature range spanning from -55°C to +150°C.

Single Bipolar Transistors Feature Summary

  • Ultra-small surface-mount footprint designed for space-constrained PCB layouts
  • High DC current gain capability suitable for low-current amplification applications
  • Qualified to AEC-Q101 standards for automotive reliability requirements
  • Totally lead-free and fully RoHS compliant construction

Single Bipolar Transistors Applications

  • Automotive electronic control units requiring AEC-Q101 qualified components
  • General-purpose signal amplification circuits
  • Switching applications within portable consumer electronics
  • Driver stages for low-power loads in compact devices

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix '-7-F' corresponds to the standard reel packaging configuration containing 3000 units per 8-inch reel. Confirm that the 'S' designation aligns with the required hFE binning specifications for your circuit design. Ensure compliance with the manufacturer's life support policy restrictions before deployment in safety-critical systems.

Single Bipolar Transistors Selection Notes

Select this component when a high-gain NPN transistor is needed in a minimal footprint. The 2DC4617S variant provides higher current gain compared to the Q and R variants. Consider the thermal resistance of 833°C/W and power derating curves if operating near maximum ratings. Verify that the 150mA current limit meets the load requirements without exceeding the saturation voltage constraints.

Single Bipolar Transistors Part Context

This part belongs to the 2DC4617Q/R/S family of 50V NPN transistors manufactured by Diodes Incorporated. The family shares identical electrical ratings and mechanical dimensions but differs in current gain binning. The complementary PNP type available in this series is the 2DA1774Q/R/S. All variants utilize the same SOT-523 case style and are designed for automated surface-mount assembly processes.

Single Bipolar Transistors Replacement Considerations

Direct substitutes within the same family include 2DC4617Q-7-F and 2DC4617R-7-F, which share identical pinouts and ratings but offer different hFE ranges.

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