2SB1417APA

Single Bipolar Transistors Overview

The Panasonic 2SB1417APA is a silicon PNP epitaxial planar power transistor designed for power amplification applications. It features a high forward current transfer ratio with satisfactory linearity and low collector-emitter saturation voltage. The device supports automatic insertion via radial taping and operates within a junction temperature range of -55°C to +150°C. Key electrical ratings include a collector-base voltage of -80V, a continuous collector current of -3A, and a peak collector current of -5A. It dissipates up to 15W at 25°C case temperature and offers a transition frequency of 30MHz.

Single Bipolar Transistors Feature Summary

• High forward current transfer ratio (hFE) providing satisfactory linearity
• Low collector-emitter saturation voltage (VCE(sat))
• Radial taping configuration enabling automatic insertion

Single Bipolar Transistors Applications

• Power amplification circuits
• General electronic equipment
• Office equipment
• Communications equipment
• Measuring instruments

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix 'APA' against official documentation to confirm package details and compliance status. Check the manufacturer's website for the latest maintenance or discontinuation status before finalizing procurement plans. Ensure all design parameters remain within the absolute maximum ratings specified in the datasheet to prevent device failure.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring a complementary PNP transistor to the 2SD2137A NPN model. Consider its thermal resistance characteristics when designing heat dissipation solutions. Verify that the required hFE rank (Q or P) aligns with circuit gain specifications. Confirm suitability for standard applications rather than specialized safety-critical environments.

Single Bipolar Transistors Part Context

This part belongs to the Panasonic Power Transistors series, specifically utilizing silicon PNP epitaxial planar technology. It is categorized under general-purpose power amplification devices. The product complies with the RoHS Directive (EU 2002/95/EC). It is intended for use in standard electronic equipment where moderate power handling and reliable switching are required.

Single Bipolar Transistors Replacement Considerations

The datasheet identifies the 2SD2137A as the complementary NPN transistor. No other direct substitute part numbers are documented in the provided source material.

Single Bipolar Transistors FAQ

What is the maximum collector current rating?

The continuous collector current (IC) is rated at -3A, while the peak collector current (ICP) is rated at -5A.

Is this transistor suitable for aerospace applications?

No. The datasheet specifies it is intended for standard applications like office and communications equipment. Special applications such as aerospace require consultation with sales staff due to higher reliability requirements.

What is the transition frequency of the device?

The transition frequency (fT) is 30 MHz, measured at VCE = -5V, IC = -0.2A, and f = 10 MHz.