Single Bipolar Transistors 2SB647-C-AP product image

2SB647-C-AP

  • Description:TRANS PNP 80V 1A TO-92MOD
  • Series:-

SKU:557095596690 Category: Brand:

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2SB647-C-AP is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists MCC (Micro Commercial Components). Its product description is TRANS PNP 80V 1A TO-92MOD. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SB647-C-AP

  • Description:TRANS PNP 80V 1A TO-92MOD
  • Series:-
  • Mfr:MCC (Micro Commercial Components)
  • Package:Tape & Box (TB)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):1:00 AM
  • Voltage - Collector Emitter Breakdown (Max):80 V
  • Vce Saturation (Max) @ Ib, Ic:1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max):10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 5V
  • Power - Max:900 mW
  • Frequency - Transition:140MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 Long Body, Formed Leads
  • Supplier Device Package:TO-92MOD
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SB647-C-AP

2SB647-C-AP

Single Bipolar Transistors Overview

The MCC 2SB647-C-AP is a PNP silicon epitaxial transistor housed in a TO-92MOD plastic package. It features a collector-base voltage of 120 Vdc and a collector current capability of -1.0 A. The device provides a DC current gain (hFE) range of 100 to 200 for the 'C' rank classification at -150 mA. Key electrical parameters include a collector-emitter breakdown voltage of -80 Vdc, a transition frequency of 140 MHz, and a maximum power dissipation of 0.9 Watts. It operates within a junction temperature range of -55°C to +150°C.

Single Bipolar Transistors Feature Summary

  • Plastic encapsulation meeting UL 94 V-0 flammability rating
  • Capable of handling up to 0.9 Watts of power dissipation
  • Designed for general-purpose switching and amplification applications

Single Bipolar Transistors Applications

  • General-purpose switching circuits
  • Amplifier stages
  • Driver circuits requiring PNP topology

Single Bipolar Transistors Procurement Notes

Verify the specific suffix '-C' corresponds to the required hFE binning (100-200). Confirm the '-AP' suffix indicates Ammo Pack packaging with 20,000 units per carton. Ensure the source is an authorized distributor to guarantee genuine parts and full traceability as per manufacturer guidelines.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with a 120V collector-base voltage and 1A continuous current rating is required. The 'C' rank offers a moderate gain range suitable for standard logic or analog interfaces. Consider the TO-92MOD package constraints for thermal management if operating near the 0.9W limit.

Single Bipolar Transistors Part Context

This part belongs to the 2SB647 series of PNP silicon transistors manufactured by Micro Commercial Components. The series includes variants like 2SB647-A and 2SB647-B, which differ primarily in collector-emitter breakdown voltage ratings and hFE gain classifications. The 2SB647-C-AP specifically targets applications needing balanced performance between voltage handling and current gain.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include other PNP transistors in the TO-92 package with similar V(CB) and I(C) ratings, such as the 2SA1015 or 2SC1815 (PNP version), provided pinouts and gain bands are verified against the datasheet specifications.

2SB647-C-AP2SB647-C-AP

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