2SB861-B-BP

Single Bipolar Transistors Overview

The MCC 2SB861-B-BP is a PNP silicon power transistor housed in a TO-220 package. It provides a collector-emitter voltage of -150 V and a collector current rating of -2 A. The device dissipates up to 1.8 W of power at 25°C, with a junction temperature range of -55°C to +150°C. The B-hFE rank specifies a forward current transfer ratio between 60 and 120 at -50 mA collector current. Electrical characteristics include a collector-base breakdown voltage of -200 V and an emitter-base breakdown voltage of -6 V.

Single Bipolar Transistors Feature Summary

• Designed for low-frequency power amplifier applications
• Suitable for color TV vertical deflection output circuits
• Epoxy casing meets UL 94 V-0 flammability rating

Single Bipolar Transistors Applications

• Low frequency power amplifiers
• Color TV vertical deflection output stages

Single Bipolar Transistors Procurement Notes

Verify the specific B-hFE binning (60-120) against circuit requirements. Confirm the BP suffix indicates bulk packaging containing 1,000 pieces per box. Ensure the component is sourced from authorized distributors to guarantee authenticity and traceability as per manufacturer guidelines.

Single Bipolar Transistors Selection Notes

Select this component when a PNP power transistor with a -150 V collector-emitter rating and -2 A continuous current capability is required. The TO-220 package facilitates heat dissipation for 1.8 W power levels. Verify that the hFE gain range of 60 to 120 aligns with the base drive design constraints.

Single Bipolar Transistors Part Context

This part belongs to the 2SB series of PNP silicon power transistors manufactured by Micro Commercial Components. The series utilizes a TO-220 through-hole package designed for robust thermal performance. The 'B' suffix denotes the specific hFE gain classification, distinguishing it from other variants within the same voltage and current family.

Single Bipolar Transistors Replacement Considerations

Cross-reference with other PNP transistors offering identical -150 V VCEO and -2 A IC ratings. Ensure replacement devices support the TO-220 footprint and meet the 1.8 W power dissipation requirement at the intended operating temperature.

Single Bipolar Transistors FAQ

What is the hFE gain range for the 2SB861-B variant?

The B-hFE rank specifies a forward current transfer ratio ranging from 60 to 120 when measured at a collector current of -50 mA.

Does the BP suffix indicate RoHS compliance?

Yes, the datasheet notes that the 'P' suffix designates RoHS compliance, while the 'BP' combination indicates bulk packaging.