Single Bipolar Transistors 2SB861-C-BP product image

2SB861-C-BP

  • Description:TRANS PNP 150V 2A TO-220AB
  • Series:-

SKU:79d1f85763fa Category: Brand:

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2SB861-C-BP is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists MCC (Micro Commercial Components). Its product description is TRANS PNP 150V 2A TO-220AB. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SB861-C-BP

  • Description:TRANS PNP 150V 2A TO-220AB
  • Series:-
  • Mfr:MCC (Micro Commercial Components)
  • Package:Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):2:00 AM
  • Voltage - Collector Emitter Breakdown (Max):150 V
  • Vce Saturation (Max) @ Ib, Ic:3V @ 50mA, 500mA
  • Current - Collector Cutoff (Max):1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 50mA, 4V
  • Power - Max:1.8 W
  • Frequency - Transition:-
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220AB
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SB861-C-BP

2SB861-C-BP

Single Bipolar Transistors Overview

The MCC 2SB861-C-BP is a PNP silicon power transistor housed in a TO-220 package. It provides a collector-emitter voltage of -150 V and a collector-base voltage of -200 V, with an emitter-base voltage rating of -6 V. The device supports a continuous collector current of -2 A and a collector power dissipation of 1.8 W. Junction temperature ranges from -55 to +150 °C. The forward current transfer ratio (hFE) for the 'C' rank is specified between 100 and 200 at -50 mA collector current.

Single Bipolar Transistors Feature Summary

  • Designed for low-frequency power amplifier applications
  • Suitable for color TV vertical deflection output circuits
  • Epoxy encapsulation meets UL 94 V-0 flammability rating

Single Bipolar Transistors Applications

  • Low frequency power amplifiers
  • Color TV vertical deflection output stages

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official documentation to confirm compliance status. The '-BP' designation indicates bulk packaging containing one thousand pieces per box. Confirm that the component meets RoHS requirements if applicable to your manufacturing standards. Ensure sourcing channels are authorized distributors to guarantee part authenticity and traceability.

Single Bipolar Transistors Selection Notes

Select this component when a PNP power transistor with a -150 V collector-emitter breakdown is required. The -2 A current capability and 1.8 W power dissipation define its thermal limits. Verify that the hFE range of 100 to 200 aligns with the gain requirements of the target circuit design.

Single Bipolar Transistors Part Context

This device belongs to the 2SB series of PNP silicon power transistors manufactured by Micro Commercial Components. It utilizes a TO-220 through-hole package suitable for high-power applications. The product line includes variants with different hFE rankings and halogen-free options.

Single Bipolar Transistors Replacement Considerations

Consult official datasheets for direct substitutes within the same manufacturer family or cross-reference specifications for equivalent PNP power transistors from other vendors.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage?

The maximum collector-emitter voltage (VCEO) is -150 V.

What is the hFE range for the 2SB861-C variant?

The forward current transfer ratio (hFE) for the C rank is between 100 and 200.

How is the device packaged?

The device is supplied in a TO-220 package.

2SB861-C-BP2SB861-C-BP

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