2SB906-Y(TE16L1,NQ

Single Bipolar Transistors Overview

The Toshiba 2SB906 is a silicon PNP diffused transistor utilizing the PCT process. It features a collector-emitter breakdown voltage of -60 V and a maximum continuous collector current of -3 A. The device achieves a typical low collector saturation voltage of -1.0 V at -3 A collector and -0.3 A base currents. It supports high power dissipation up to 20 W at a case temperature of 25°C, with a junction temperature rating of 150°C. The component is packaged in a JEDEC 2-7J1A outline.

Single Bipolar Transistors Feature Summary

• Low collector saturation voltage for efficient switching
• High power dissipation capability under thermal constraints
• Complementary pairing with the 2SD1221 NPN transistor

Single Bipolar Transistors Applications

• Audio frequency power amplifier circuits
• General-purpose switching applications requiring high current handling

Single Bipolar Transistors Procurement Notes

Verify RoHS compatibility status by contacting the manufacturer or authorized distributor, as markings indicate specific environmental compliance variants. Confirm the ordering suffix matches the required lead time and packaging specifications. Review the Toshiba Semiconductor Reliability Handbook for derating concepts before finalizing procurement plans.

Single Bipolar Transistors Selection Notes

Select this component when designing complementary pairs with the 2SD1221 NPN transistor. Ensure the application circuit maintains the collector-emitter voltage within the -60 V limit. Verify that the thermal management design allows for 20 W dissipation at the specified case temperature to maintain reliability.

Single Bipolar Transistors Part Context

This part belongs to the Toshiba discrete bipolar transistor family manufactured using the PCT (Planar Complementary Transistor) process technology. It serves as the PNP counterpart to the 2SD1221 NPN transistor, designed specifically for audio power amplification and general switching tasks where low saturation voltage is critical.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SD1221 as its complementary pair. No other direct substitute part numbers are documented in the provided source material.