Single Bipolar Transistors 2SC1815-GR TIN/LEAD product image

2SC1815-GR TIN/LEAD

$0.38
  • Description:50V 150MA 400MW TH TRANSISTOR-SM
  • Series:2SC1815

SKU:5d959068e843 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

2SC1815-GR TIN/LEAD is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Central Semiconductor Corp. Its product description is 50V 150MA 400MW TH TRANSISTOR-SM. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC1815-GR TIN/LEAD

  • Description:50V 150MA 400MW TH TRANSISTOR-SM
  • Series:2SC1815
  • Mfr:Central Semiconductor Corp
  • Package:Box
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):150 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max):100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 2mA, 6V
  • Power - Max:400 mW
  • Frequency - Transition:80MHz
  • Operating Temperature:-55°C ~ 125°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package:TO-92-3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SC1815-GR TIN/LEAD

2SC1815-GR TIN/LEAD

Single Bipolar Transistors Overview

The Central Semiconductor Corp 2SC1815-GR TIN/LEAD is a small signal NPN silicon epitaxial transistor housed in a TO-92 plastic package. It supports a maximum collector current of 0.15 A and a collector-emitter breakdown voltage of 50 V. The device features a minimum DC current gain (hFE) of 120, with power dissipation rated at 0.4 W. Operating temperatures range from -65°C to +125°C.

Single Bipolar Transistors Feature Summary

  • NPN silicon epitaxial construction for general-purpose amplification
  • High breakdown voltage capability suitable for audio frequency applications
  • Low noise performance characteristics
  • Complementary pairing available with PNP counterparts

Single Bipolar Transistors Applications

  • Audio frequency voltage amplifier circuits
  • Low noise amplifier stages
  • General purpose switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific suffix GR against manufacturer documentation to confirm the exact hFE binning requirements. Confirm RoHS compliance status and lead-free tin/lead plating specifications directly with the supplier. Ensure the TO-92 package dimensions match your PCB footprint constraints before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when a low-noise NPN transistor with moderate voltage ratings is required for audio or general signal processing. Compare the 0.15 A current limit and 50 V breakdown voltage against circuit demands. Verify that the TO-92 package is compatible with the intended assembly method and thermal management strategy.

Single Bipolar Transistors Part Context

This part belongs to the 2SC1815 series of NPN silicon transistors designed for audio and general-purpose use. It is often paired with complementary PNP devices like the 2SA1015. The GR suffix typically denotes a specific DC current gain classification within the product line.

Single Bipolar Transistors Replacement Considerations

Compatible substitutes include the Toshiba 2SC1815-O/Y/GR and generic equivalents such as C1815. Verify pinout compatibility and ensure replacement parts meet the same voltage and current specifications.

2SC1815-GR TIN/LEAD2SC1815-GR TIN/LEAD
$0.38
Buy Now

Recent News