Single Bipolar Transistors 2SC2001-K-AP product image

2SC2001-K-AP

  • Description:TRANS NPN 25V 0.7A TO-92
  • Series:-

SKU:a89452bf6d2e Category: Brand:

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2SC2001-K-AP is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists MCC (Micro Commercial Components). Its product description is TRANS NPN 25V 0.7A TO-92. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC2001-K-AP

  • Description:TRANS NPN 25V 0.7A TO-92
  • Series:-
  • Mfr:MCC (Micro Commercial Components)
  • Package:Tape & Box (TB)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):700 mA
  • Voltage - Collector Emitter Breakdown (Max):25 V
  • Vce Saturation (Max) @ Ib, Ic:600mV @ 70mA, 700mA
  • Current - Collector Cutoff (Max):100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 100mA, 1V
  • Power - Max:600 mW
  • Frequency - Transition:50MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Supplier Device Package:TO-92
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SC2001-K-AP

2SC2001-K-AP

Single Bipolar Transistors Overview

The 2SC2001-K-AP is an NPN silicon small-signal transistor in a TO-92 plastic-encapsulated package. It features a collector current of 0.7A and a collector-base voltage of 30V, with power dissipation rated at 0.6W. The device operates within a junction temperature range of -55°C to +150°C. Electrical characteristics include a DC current gain (hFE) rank K of 200-400 at IC=100mA, VCE=1V. Collector-emitter breakdown voltage is 25V, and transition frequency is 50MHz.

Single Bipolar Transistors Feature Summary

  • Capable of 0.6 Watts of power dissipation
  • Collector current rating of 0.7A
  • Operating and storage junction temperature range from -55°C to +150°C

Single Bipolar Transistors Applications

  • General purpose switching applications
  • Audio amplifier circuits
  • Driver stages for power transistors

Single Bipolar Transistors Procurement Notes

Verify the suffix 'K' corresponds to the hFE bin range of 200-400 as specified in the datasheet classification table. Confirm the '-AP' suffix indicates Ammo Packing containing 20,000 pieces per carton. Ensure the component meets UL 94 V-0 flammability ratings and Moisture Sensitivity Level 1 requirements for your specific manufacturing process.

Single Bipolar Transistors Selection Notes

Select this component when a medium-gain NPN transistor with 0.7A continuous collector current capability is required. The TO-92 package suits through-hole mounting. The 'K' bin provides high current gain suitable for low-drive applications. Consider thermal management if operating near the 0.6W dissipation limit.

Single Bipolar Transistors Part Context

This part belongs to the 2SC2001 series manufactured by Micro Commercial Components. The series includes variants distinguished by hFE gain bins (M, L, K) and packaging options (Bulk, Ammo). The 2SC2001 is a standard NPN silicon transistor widely used in consumer electronics and general-purpose electronic designs requiring moderate current handling.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include other 2SC2001 variants such as 2SC2001-M or 2SC2001-L, provided the hFE gain bin matches the circuit requirements. Verify pinout compatibility and electrical parameters against the original design specifications before substitution.

2SC2001-K-AP2SC2001-K-AP

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