2SC2235(T6KMAT,F,M

Description：TRANS NPN 120V 0.8A TO-92MOD
Series：-

SKU:8b93a4826a01 Category: Single Bipolar Transistors Brand: Toshiba Semiconductor and Storage

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Product introduction

2SC2235(T6KMAT,F,M is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS NPN 120V 0.8A TO-92MOD. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC2235(T6KMAT,F,M

Description：TRANS NPN 120V 0.8A TO-92MOD
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk
Transistor Type：NPN
Current - Collector (Ic) (Max)：800 mA
Voltage - Collector Emitter Breakdown (Max)：120 V
Vce Saturation (Max) @ Ib, Ic：1V @ 50mA, 500mA
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 100mA, 5V
Power - Max：900 mW
Frequency - Transition：120MHz
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 Long Body
Supplier Device Package：TO-92MOD
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SC2235(T6KMAT,F,M

2SC2235(T6KMAT,F,M

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SC2235(T6KMAT,F,M is a silicon NPN epitaxial transistor manufactured using the PCT process. It features a collector-emitter breakdown voltage of 120 V, a maximum collector current of 800 mA, and a collector power dissipation of 900 mW. The device exhibits a transition frequency of 120 MHz and a DC current gain ranging from 80 to 240 depending on classification. It is housed in a JEDEC TO-92MOD package with a junction temperature rating of 150 °C.

Single Bipolar Transistors Feature Summary

Complementary pairing with the 2SA965 PNP transistor for push-pull configurations
High-voltage capability suitable for demanding amplifier stages
Optimized transition frequency for audio driver applications

Single Bipolar Transistors Applications

Audio power amplifier circuits
Driver stage amplifiers

Single Bipolar Transistors Procurement Notes

Verify RoHS compatibility status directly with Toshiba sales representatives, as markings indicate specific environmental compliance levels. Confirm that the ordering suffix corresponds to the required hFE binning (O or Y) for your design specifications. Ensure the component is sourced from authorized distributors to guarantee authenticity and traceability.

Single Bipolar Transistors Selection Notes

Select this component when designing general-purpose audio power amplifiers requiring high-voltage handling and complementary matching. Consider the TO-92MOD package constraints for thermal management and PCB layout. Evaluate the hFE classification requirements against the circuit's base drive capabilities to ensure proper saturation and linearity.

Single Bipolar Transistors Part Context

This part belongs to the 2SC2235 series of NPN transistors designed specifically for audio applications. It utilizes Toshiba's PCT process technology to achieve reliable performance in driver stages. The device is engineered to pair effectively with its PNP counterpart, facilitating balanced output stages in consumer electronics and home appliances.

Single Bipolar Transistors Replacement Considerations

The 2SA965 is documented as the complementary PNP transistor for this device. Verify pinout compatibility and electrical parameters before substituting with other NPN transistors in the same voltage and current class.