A3I25X050GNR1

RF FETs, MOSFETs Overview

The A3I25X050GNR1 is an RF LDMOS wideband integrated power amplifier from the Airfast family, designed for operation between 2300 and 2700 MHz. It features a multi-stage Doherty structure rated for 20 to 32 Vdc drain supply. The device integrates on-chip matching with a 50 ohm input and DC blocking. Typical performance at 28 Vdc includes 5.6 W average output power with 39.5% PAE, or 8.7 W average output power with 44.8% PAE in single-carrier W-CDMA applications. It supports all typical cellular base station modulation formats.

RF FETs, MOSFETs Feature Summary

• Integrated Doherty splitter and combiner architecture
• On-chip matching providing 50 ohm input impedance
• Integrated quiescent current temperature compensation with enable/disable function

RF FETs, MOSFETs Applications

• Cellular base station transmitters
• Single-carrier W-CDMA signal amplification
• Broadband RF power amplification in the 2300–2700 MHz band

RF FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix R1 indicates a reel quantity of 500 units on a 32 mm tape width. Confirm package type OM-400G-8 matches the required lead forming configuration. Ensure compatibility with Rogers RO4350B substrate materials for optimal thermal and RF performance as specified in the test circuit layouts.

RF FETs, MOSFETs Selection Notes

Select this component for designs requiring high efficiency and linearity in the 2300–2700 MHz range. The integrated Doherty topology reduces external component count compared to discrete solutions. Verify that the system can support the required gate voltages for carrier and peaking stages, specifically noting the distinct bias requirements for optimal PAE and ACPR performance.

RF FETs, MOSFETs Part Context

This part belongs to NXP's Airfast RF LDMOS Integrated Power Amplifiers series. It is the gull-wing (GN) variant of the A3I25X050N, distinguished by its surface-mount lead configuration. The device is engineered to replace discrete Doherty amplifier designs, offering a compact solution for modern cellular infrastructure.

RF FETs, MOSFETs Replacement Considerations

The A3I25X050N is the direct non-gull-wing equivalent. No other cross-model substitutes are documented in the provided datasheet.

RF FETs, MOSFETs FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature range is up to +225 °C.

How is the exposed backside of the package connected?

The exposed backside of the package serves as the source terminal for the transistor.

What is the ESD protection rating for the Human Body Model?

The device meets Class 1C per JS-001-2017 for the Human Body Model.