Single FETs, MOSFETs APT30F60J product image

APT30F60J

  • Description:MOSFET N-CH 600V 31A ISOTOP
  • Series:POWER MOS 8™
  • Mfr:Microchip Technology
  • Package:Tube

SKU:f651b566c2a7 Category: Brand:

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APT30F60J is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 600V 31A ISOTOP. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT30F60J

  • Description:MOSFET N-CH 600V 31A ISOTOP
  • Series:POWER MOS 8™
  • Mfr:Microchip Technology
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):600 V
  • Current - Continuous Drain (Id) @ 25°C:31A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:150mOhm @ 21A, 10V
  • Vgs(th) (Max) @ Id:5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs:215 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:8590 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):355W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Supplier Device Package:ISOTOP®
  • Package / Case:SOT-227-4, miniBLOC

Single FETs, MOSFETs datasheet and documents for APT30F60J

APT30F60J

Single FETs, MOSFETs Overview

The APT30F60J is a single N-channel FREDFET MOS transistor manufactured by Microchip Technology. It utilizes silicon technology and is housed in an SOT-227-4 package designed for screw mounting. The device features a drain-source breakdown voltage of 600 V and supports a continuous drain current of 30 A. Key electrical characteristics include a maximum on-resistance of 190 mOhms, a gate-source voltage range of -30 V to +30 V, and a threshold voltage of 2.5 V. It operates within a temperature range of -55°C to +150°C with a power dissipation rating of 415 W.

Single FETs, MOSFETs Feature Summary

  • High-voltage capability with 600 V drain-source breakdown voltage
  • Fast recovery FET technology optimized for switching applications
  • Robust thermal performance with 415 W power dissipation rating
  • Single channel enhancement mode configuration

Single FETs, MOSFETs Applications

  • High-frequency power conversion circuits
  • Switch-mode power supply designs
  • Industrial motor drive systems

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision and RoHS compliance status directly with Microchip Technology or authorized distributors before procurement. Confirm that the SOT-227-4 package dimensions align with your PCB footprint requirements. Ensure proper thermal management solutions are integrated to maintain junction temperatures within the specified operational limits during high-load conditions.

Single FETs, MOSFETs Selection Notes

Select this component when a 600 V rated, 30 A continuous current MOSFET is required in a screw-mountable package. The 190 mOhm on-resistance offers a balance between conduction losses and switching speed. Consider the 415 W power dissipation capacity relative to your heatsinking capabilities. This part is suitable for applications demanding fast recovery characteristics in medium-power environments.

Single FETs, MOSFETs Part Context

This component belongs to the APT series of discrete power modules from Microchip Technology. The series encompasses various high-voltage silicon devices including rectifiers, IGBTs, and MOSFETs. The APT30F60J specifically addresses the need for reliable, high-current switching elements in industrial and commercial power electronics where robust packaging and proven silicon technology are prioritized.

Single FETs, MOSFETs Replacement Considerations

Consult official Microchip documentation for verified cross-reference part numbers. Do not substitute based solely on generic parameter matching without confirming pinout compatibility and thermal characteristics.

APT30F60JAPT30F60J

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